Features: SpecificationsDescription 2SC2178 is a kind of silicon NPN epitaxial planar type.It is widely used in the VHF band power amplifier.Here you can some information about the features.First,the minimum output power (PO) is 15 W (f=175 MHz,VCC=12.5 V,Pi=1.3 W).Secondly,it is 100% tested for l...
2SC2178: Features: SpecificationsDescription 2SC2178 is a kind of silicon NPN epitaxial planar type.It is widely used in the VHF band power amplifier.Here you can some information about the features.First,th...
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2SC2178 is a kind of silicon NPN epitaxial planar type.It is widely used in the VHF band power amplifier.Here you can some information about the features.First,the minimum output power (PO) is 15 W (f=175 MHz,VCC=12.5 V,Pi=1.3 W).Secondly,it is 100% tested for load mismatch stress at all phase angles with 30:1 VSWR @ VCC=15 V,Pi=1.3 W,f=175 MHz.
The following is about the maximum ratings of 2SC2178 at Ta=25.The collector-base voltage (VCBO) is 35 V.The collector-emitter voltage (VCEO) is 18 V.The emitter-base voltage (VEBO) is 3.5 V.The collector current (IC) is 3.5 A.The collector power dissipation (PC) is 35 W at TC=25.The junction temperature is 175.The storage temperature is (Tstg) from -65 to +175.
What comes next is about the electrical characteristics of 2SC2178 at Ta=25.The maximum collector cutoff current (ICBO) is 1.0 mA at VCB=15 V and IE=0.Then is about the DC current gain (hFE).The minimum hFE is 10 at VCE=5 V and IC=1 A.The maximum output capacitance (cob) is 80 pF at VCB=10 V,f=1 MHz,IE=0.The minimum collector to base breakdown voltage (V(BR)CBO) is 35 V at IC=10 mA,IE=0.The minimum collector to emitter breakdown voltage (V(BR)CEO) is 18 V at IC=25 mA,IB=0.The minimum emitter to base breakdown voltage (V(BR)EBO) is 3.5 V at IC=0,IE=1 mA.The minimum output power (PO) is 15 W and the maximum is 18 W at VCC=12.5 W,f=175 MHz,Pi=1.3 W.The typical series equivalent input impendance (Zin) is 1.25+j0.6 and the typical series equivalent input impendance (ZOUT) is 4.9-j0.3 at VCC=12.5 W,f=175 MHz,PO=15 W.