2SC2131

The 2SC2131 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in UHF band mobile radio applications and driver amplifiers in general.

There are some features of 2SC2131 as follows: (1)high power gain: Gpe6.7 dB @ VCC=13.5 V, PO=1.4 W, f=500 MHz; (2)TO-39 metak sealed package for high reliability; (3)emitter ballasted construction, gold metallization for good performance; (4)emitter electrode is connected electrically to the case.

The following is about the absolute maximum ratings of 2SC2131(Tc=25): (1)collector-base voltage, VCBO: 40 V; (2)collector-emitter voltage (RBE=), VCEO: 18 V; (3)emitter-base voltage, VEBO: 4 V; (4)collector current, IC: 0.6 A; (5)collector power dissipation, PC: 4 W (TC=25) and 0.8 W (Ta=25); (6)junction temperature, Tj: 175; (7)storage temperature, Tstg: -55 to +175;(8)thermal resistance junction to ambient, Rth-a: 187.5/W; (9)thermal resistance junction to case, Rth-c: 37.5/W.