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2SC2120

Application• High hFE: hFE (1) = 100~320• 1 watts amplifier applications.• Complementary to 2SA950Specifications PARAMETER SYMOL VALUE UNIT Collector-base voltage VCBO 35 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 5 V Collector C...

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SeekIC No. : 004221794 Detail

2SC2120: Application• High hFE: hFE (1) = 100~320• 1 watts amplifier applications.• Complementary to 2SA950Specifications PARAMETER SYMOL VALUE UNIT Collector-base voltage VCBO...

2SC2120 Data Sheet

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Part Number:
2SC2120
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Application

• High hFE: hFE (1) = 100~320
• 1 watts amplifier applications.
• Complementary to 2SA950




Specifications

PARAMETER SYMOL VALUE UNIT
Collector-base voltage VCBO 35 V
Collector-emitter voltage VCEO 30 V
Emitter-base voltage VEBO 5 V
Collector Current IC 800 mA
Base Current IB 160 mA
Collector power dissipation PC 600 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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