2SC2097

The 2SC2097 is a silicon npn epotaxial planar type transistor designed for rf power amplifiers in hf band mobile radio applications.

Features of the 2SC2097 are:(1)high power gain:Gpe12.3db @Vcc=13.5,Po=75W,f=30MHz; (2)emitter ballasted construction for good performances; (3)low thermal resistance ceramic package with flange; (4)ability of withstanding infinite load vswr when operated at Vcc=15.2V,Po=70W,f=30MHz,Tc=25.

The absolute maximum ratings of the 2SC2097 can be summarized as:(1)collector to base voltage:40V; (2)emitter to base voltage:4.5V; (3)collector to emitter voltage:17V; (4)collector current:3.5A; (5)collector dissipation,Ta=25:2W;Tc=25:30W; (6)junction temperature:175; (7)storage temperature:-55 to 175; (8)thermal resistance,junction to ambient:75/W;junction to case:5/W.If you want to know more information such as the electrical characteristics about the BF904, please download the datasheet in www.seekic.com or www.chinaicmart.com.