DescriptionThe 2SC2086 is a silicon npn epotaxial planar type transistor designed for rf power amplifers in hf band mobile radio applications. Features of the 2SC2086 are:(1)high power gain:Gpe13db @Vcc=12V,Po=0.3W,f=27MHz; (2)emitter ballasted construction,gold metallization for good perfotmance...
2SC2086: DescriptionThe 2SC2086 is a silicon npn epotaxial planar type transistor designed for rf power amplifers in hf band mobile radio applications. Features of the 2SC2086 are:(1)high power gain:Gpe13db...
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The 2SC2086 is a silicon npn epotaxial planar type transistor designed for rf power amplifers in hf band mobile radio applications.
Features of the 2SC2086 are:(1)high power gain:Gpe13db @Vcc=12V,Po=0.3W,f=27MHz; (2)emitter ballasted construction,gold metallization for good perfotmances; (3)TO-92 similar package with low thermal resistance.
The absolute maximum ratings of the 2SC2086 can be summarized as:(1)collector to base voltage:75V; (2)emitter to base voltage:4V; (3)collector to emitter voltage:35V; (4)collector current:1A; (5)collector dissipation:Ta=25:0.8W; (6)junction temperature:135; (7)storage temperature:-55 to 135; (8)thermal resistance:137.5/W.If you want to know more information such as the electrical characteristics about the BF904, please download the datasheet in www.seekic.com or www.chinaicmart.com.