DescriptionThe 2SC2062S is designed as the high-gain amplifier transistor (32 V, 0.3 A) that has two points of features:(1)darlington connection for a high hFE (DC current gain = 5000 (min.) at VCE = 3 V, Ic=0.1 A);(2)high input impedance. The absolute maximum ratings of the 2SC2062S can be summa...
2SC2062S: DescriptionThe 2SC2062S is designed as the high-gain amplifier transistor (32 V, 0.3 A) that has two points of features:(1)darlington connection for a high hFE (DC current gain = 5000 (min.) at VCE ...
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The 2SC2062S is designed as the high-gain amplifier transistor (32 V, 0.3 A) that has two points of features:(1)darlington connection for a high hFE (DC current gain = 5000 (min.) at VCE = 3 V, Ic=0.1 A);(2)high input impedance.
The absolute maximum ratings of the 2SC2062S can be summarized as:(1)collector-emitter voltage: 32 V;(2)collector-base voltage: 40 V;(3)emitter-base voltage: 12.0 V;(4)collector current peak: 0.3 A;(5)base current: 0.3 A;(6)total power dissipation @ Tc = 25: 0.3 W;(7)operating and storage junction temperature range: -55 to +150 . If you want to know more information such as the electrical characteristics about the 2SC2062S, please download the datasheet in www.seekic.com or www.chinaicmart.com .