2SC2056

The 2SC2056 is a silicon npn epitaxial planar type transistor designed for rf power amplifiers on vhf band portable or hand-held radio applications.Features of the 2SC2056 are:(1)high power gain:Gpe9dB @Vcc=7.2V,Po=1.6W,f=175MHz; (2)emitter ballasted construction,gold metallization for good performances; (3)TO-39 metal seeled package for high reliability;(4)emitter electrode is connected electrically to the case.

The absolute maximum ratings of the 2SC2056 can be summarized as:(1)collector-base voltage:18V; (2)emitter-base voltage:4V; (3)collector-emitter voltage:9V; (4)collector current:0.6A; (5)collector dissipation:0.8W(Ta=25)4W(Tc=25); (6)junction temperature:175; (7)storage temperature:-55~175;(7)thermal resistance:187.5/W.

The electrical characteristics at TA=25°C of the 2SC2056 can be summarized as:(1)emitter to base breakdown voltage:4V; (2)collector to base breakdown voltage:18V; (3)collector to emitter breakdown voltage:9V; (4)collector cutoff current:100A; (5)emitter cutoff current:100A; (6)dc forward current gain:10~180; (7)output power:1.6W; (8)collector efficiency:55%.If you want to know more information such as the electrical characteristics ,please download the datasheet in www.seekdatasheet.com .