2SC2055

The 2SC2055 is a silicon npn epitaxial planar type transistor designed for rf amplifiers on vhf band mobile radio applications.Features of the 2SC2055 are:(1)high power gain:Gpe13dB @Vcc=7.2V,Po=0.2W,f=175MHz; (2)emitter ballasted construction,gold metallization for high reliability and good performances; (3)TO-92 similar package is combinient for mounting.

The absolute maximum ratings of the 2SC2055 can be summarized as:(1)collector-base voltage:18V; (2)emitter-base voltage:4V; (3)collector-emitter voltage:9V; (4)collector current:0.3A; (5)collector dissipation:0.5W; (6)junction temperature:135; (7)storage temperature:-55~135;(7)thermal resistance:200/W.

The electrical characteristics at TA=25°C of the 2SC2055 can be summarized as:(1)emitter to base breakdown voltage:4V; (2)collector to base breakdown voltage:18V; (3)collector to emitter breakdown voltage:9V; (4)collector cutoff current:30A; (5)emitter cutoff current:30A; (6)dc forward current gain:10~180; (7)output power:0.2W; (8)collector efficiency:50%.If you want to know more information such as the electrical characteristics ,please download the datasheet in www.seekdatasheet.com .