DescriptionThe 2SC2053 is a silicon npn epitaxial planar type transistor designed for rf amplifiers on vhf band mobile radio applications.Features of the 2SC2053 are:(1)high power gain:Gpe15.7dB @Vcc=13.5V,Po=0.15W,f=175MHz; (2)emitter ballasted construction,gold metallization for high reliability...
2SC2053: DescriptionThe 2SC2053 is a silicon npn epitaxial planar type transistor designed for rf amplifiers on vhf band mobile radio applications.Features of the 2SC2053 are:(1)high power gain:Gpe15.7dB @Vc...
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The 2SC2053 is a silicon npn epitaxial planar type transistor designed for rf amplifiers on vhf band mobile radio applications.Features of the 2SC2053 are:(1)high power gain:Gpe15.7dB @Vcc=13.5V,Po=0.15W,f=175MHz; (2)emitter ballasted construction,gold metallization for high reliability and good performances; (3)TO-92 similar package is combinient for mounting.
The absolute maximum ratings of the 2SC2053 can be summarized as:(1)collector-base voltage:40V; (2)emitter-base voltage:4V; (3)collector-emitter voltage:17V; (4)collector current:0.3A; (5)collector dissipation:0.6W; (6)junction temperature:135; (7)storage temperature:-55~135;(7)thermal resistance:183/W.
The electrical characteristics at TA=25°C of the 2SC2053 can be summarized as:(1)emitter to base breakdown voltage:4V; (2)collector to base breakdown voltage:40V; (3)collector to emitter breakdown voltage:17V; (4)collector cutoff current:20A; (5)emitter cutoff current:20A; (6)dc forward current gain:10~180; (7)output power:150mW; (8)collector efficiency:40%.If you want to know more information such as the electrical characteristics ,please download the datasheet in www.seekdatasheet.com .