2SC2026Y

The 2SC2026Y is designed as one kind of NPN silicon transistor that is suitable for low noise amplifier in the VHF to UHF band. This device has three points of features:(1)NF 3.0 dB typ. @ f=500 MHz;(2)Gpe 15 dB typ. @ f=500 MHz;(3)fT 2.0 GHz typ..

The absolute maximum ratings of the 2SC2026Y can be summarized as:(1)storage temperature: -55 to +150 ;(2)junction temperature: +150 maximum;(3)total power dissipation: 250 mW;(4)collector to base voltage: 30 V;(5)collector to emitter voltage: 14 V;(6)emitter to base voltage: 3.0 V;(7)collector current: 50 mA.

And the electrical characteristics of the 2SC2026Y can be summarized as:(1)DC current gain: 25 to 200;(2)gain bandwidth product: 1.5 to 2.0 GHz;(3)output capacitance: 0.75 to 1.1 pF;(4)power gain: 13 to 15 dB;(5)noise figure: 3.0 to 4.0 dB;(6)collector cutoff current: 0.1 uA;(7)emitter cutoff current: 0.1 uA. If you want to know more information such as the electrical characteristics about the 2SC2026Y, please download the datasheet in www.seekic.com or www.chinaicmart.com .