2SC2021

The 2SC2021 is designed as one kind of exitaxial planar NPN silicon transistor that is suitable for low noise amplifier in the VHF to UHF band. This device has four points of features:(1)low collector saturation voltage: VCE(sat) = 0.04 V (approx.) at 10 mA;(2)low output capacitance: Cob = 2.0 pF;(3)low noise: NF = 1 dB typ (at VCE = 6V, Ic = 0.1 mA, Rg = 10 k, f = 1 KHz);(4)complementary pair with 2SA937.

The absolute maximum ratings of the 2SC2021 can be summarized as:(1)storage temperature: -55 to +150 ;(2)junction temperature: +125 maximum; (3)total power dissipation: 300 mW;(4)collector to base voltage: 50 V;(5)collector to emitter voltage: 40 V;(6)emitter to base voltage: 5.0 V;(7)collector current: 100 mA.

And the electrical characteristics of the 2SC2021 can be summarized as:(1)DC current gain: 25 to 200;(2)gain bandwidth product: 1.5 to 2.0 GHz;(3)output capacitance: 2.0 to 3.5 pF;(4)power gain: 13 to 15 dB;(5)Cob: 2.0 to 3.5 pF;(6)collector cutoff current: 0.5 uA;(7)emitter cutoff current: 0.5 uA. If you want to know more information such as the electrical characteristics about the 2SC2021, please download the datasheet in www.seekic.com or www.chinaicmart.com .