2SC2020

The 2SC2020 is designed as one kind of exitaxial planar NPN silicon transistor that is suitable for low noise amplifier in the VHF to UHF band. This device has four points of features:(1)high power gain: 14 dB min;(2)good linearity;(3)large surge capability;(4)high reliability.

The absolute maximum ratings of the 2SC2020 can be summarized as:(1)storage temperature: -55 to +150 ;(2)junction temperature: +150 maximum;(3)total power dissipation: 12 W;(4)collector to base voltage: 45 V;(5)collector to emitter voltage: 20 V;(6)emitter to base voltage: 4.0 V;(7)collector current: 3 A.

And the electrical characteristics of the 2SC2020 can be summarized as:(1)collector cut off current: 2 uA;(2)emitter cut off current: 2 uA;(3)collector-base voltage: 45 V;(4)collector-emitter voltage: 20 V;(5)collector-emitter saturation voltage: 0.2 to 0.5 V;(6)base-emitter saturation voltage: 0.9 to 1.0 V;(7)DC current gain: 30 to 150. If you want to know more information such as the electrical characteristics about the 2SC2020, please download the datasheet in www.seekic.com or www.chinaicmart.com .