2SC1968

The 2SC1968 is a silicon npn epitaxial planar type transistor designed for rf power amplifiers on UHF band mobile radio applications.Features of the 2SC1968 are:(1)high power gain:Gpe3.7dB @Vcc=13.5V,Po=14W,f=470MHz; (2)emitter ballasted construction and gold metallization for high reliability and good performances; (3)low thermal resistance ceramic package with flange; (4)ability of withstanding more than 20:1 load VSWR all phase when operated at Vcc=15.2V,Po=18W,f=470MHz.

The absolute maximum ratings of the 2SC1968 can be summarized as:(1)collector to base voltage:35V; (2)emitter to base voltage:4V; (3)collector to emitter voltage:17V; (4)collector current:5A; (5)collector dissipation:3W(Ta=25);40W(Tc=25); (6)junction temperature:175; (7)storage temperature:-65~175; (8)thermal resistance junction to amnbient:50/W; (9)thermal resistance junction to case:3.75/W.

The electrical characteristics at TA=25°C of the 2SC1968 can be summarized as:(1)emitter to base breakdown voltage:4V; (2)collector to base breakdown voltage:35V; (3)collector to emitter breakdown voltage:17V; (4)collector cutoff current:500A; (5)emitter cutoff current:400A; (6)dc forward current gain:10~180; (7)output power:14W; (8)collector efficiency:50%.If you want to know more information such as the electrical AC characteristics ,please download the datasheet in www.seekdatasheet.com .