2SC1966

The 2SC1966 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on UHF band mobile radio applications.

Features of the 2SC1966 are:(1)high power gain:Gpe7.8dB @ VCC=13.5V,Po=3W,f=470MHz;(2)emitter ballasted construction and gold metallization for high reliability and good performances;(3)low thermal resistance ceramic package with flange.

The absolute maximum ratings of the 2SC1966 can be summarized as:(1):the characteristic is collector-base voltage,the symbol is VCBO,the rating is 35,the unit is V;(2):the characteristic is collector-emittre voltage,the symbol is VCEO,the rating is 17,the unit is V;(3):the characteristic is emitter-base voltage,the symbol is VEBO,the rating is 3.5,the unit is V;(4):the characteristic is collector current,the symbol is IC,the rating is 1,the unit is A;(5):the characteristic is collector power dissipation Tc=25,the symbol is PC,the rating is 10,the unit is W;(6):the characteristic is junction temperature,the symbol is Tj,the rating is 175,the unit is ;(7):the characteristic is storage temperature range,the symbol is Tstg,the rating is -55 to 175,the unit is ;(8):the characteristic is thermal resistance junction to case,the symbol is Rth-c,the rating is 15,the unit is /W.