2SC1946A

DescriptionThe 2SC1946A is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications. Features of the 2SC1946A are:(1)high power gain:Gpe10dB @ VCC=13.5V,Po=30W,f=175MHz;(2)emitter ballasted construction for high reliability and good per...

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SeekIC No. : 004221743 Detail

2SC1946A: DescriptionThe 2SC1946A is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications. Features of the 2SC1946A are:(1)high power gain:Gpe...

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Part Number:
2SC1946A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/4

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Product Details

Description



Description

The 2SC1946A is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications.

Features of the 2SC1946A are:(1)high power gain:Gpe10dB @ VCC=13.5V,Po=30W,f=175MHz;(2)emitter ballasted construction for high reliability and good performances;(3)low thermal resistance ceramic package with flange;(4)ability of withstanding infinite load VSWR when operated at VCC=15.2V,Po=30W,f=175MHz;(5)equivalent input/output impedance at rated operating conditions:Zin=0.65+j1.4,Zout=1.9+j0.75.

The absolute maximum ratings of the 2SC1946A can be summarized as:(1):the characteristic is collector-base voltage,the symbol is VCBO,the rating is 35,the unit is V;(2):the characteristic is collector-emittre voltage,the symbol is VCEO,the rating is 17,the unit is V;(3):the characteristic is emitter-base voltage,the symbol is VEBO,the rating is 4,the unit is V;(4):the characteristic is collector current,the symbol is IC,the rating is 7,the unit is A;(5):the characteristic is collector power dissipation Ta=25,the symbol is PC,the rating is 3,the unit is W;(6):the characteristic is collector power dissipation Tc=25,the symbol is PC,the rating is 50,the unit is W;(7):the characteristic is junction temperature,the symbol is Tj,the rating is 175,the unit is ;(8):the characteristic is storage temperature range,the symbol is Tstg,the rating is -55 to 175,the unit is ;(9):the characteristic is thermal resistance junction to ambient,the symbol is Rth-a,the rating is 50,the unit is /W;(10):the characteristic is thermal resistance junction to case,the symbol is Rth-c,the rating is 3,the unit is /W.




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