2SC1945

The 2SC1945 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF band mobile radio applications.

Features of the 2SC1945 are:(1)high power gain:Gpe14.5dB @ VCC=12V,Po=14W,f=27MHz;(2)emitter ballasted construction for high reliability and good performances;(3)TO-220 package similarly is combinient for mounting;(4)ability of withstanding infinite load VSWR when operated at VCC=16V,Po=18W,f=27MHz.

The absolute maximum ratings of the 2SC1945 can be summarized as:(1):the characteristic is collector-base voltage,the symbol is VCBO,the rating is 80,the unit is V;(2):the characteristic is collector-emittre voltage,the symbol is VCEO,the rating is 40,the unit is V;(3):the characteristic is emitter-base voltage,the symbol is VEBO,the rating is 5,the unit is V;(4):the characteristic is collector current,the symbol is IC,the rating is 6,the unit is A;(5):the characteristic is collector power dissipation Ta=25,the symbol is PC,the rating is 1.5,the unit is W;(6):the characteristic is collector power dissipation Tc=25,the symbol is PC,the rating is 20,the unit is W;(7):the characteristic is junction temperature,the symbol is Tj,the rating is 150,the unit is ;(8):the characteristic is storage temperature range,the symbol is Tstg,the rating is -55 to 150,the unit is ;(9):the characteristic is thermal resistance junction to ambient,the symbol is Rth-a,the rating is 83.3,the unit is /W;(10):the characteristic is thermal resistance junction to case,the symbol is Rth-c,the rating is 6.25,the unit is /W.