2SC1941

The 2SC1941 is designed as one kind of exitaxial planar NPN silicon transistor that is suitable for low noise amplifier in the VHF to UHF band. This device has two points of features:(1)high total power dissipation and high breakdown voltage: 1.0 W at 25 ambient temperature / VCEO=160 V;(2)complementary to the NEC 2SA916 PNP transistor.

The absolute maximum ratings of the 2SC1941 can be summarized as:(1)storage temperature: -55 to +150 ;(2)junction temperature: +150 maximum;(3)total power dissipation: 1.0 W;(4)collector to base voltage: 160 V;(5)collector to emitter voltage: 160 V;(6)emitter to base voltage: 5.0 V;(7)collector current: 50 mA;(8)base current: 10 mA.

And the electrical characteristics of the 2SC1941 can be summarized as:(1)collector cut off current: 100 nA;(2)emitter cut off current: 100 nA;(3)gain bandwidth product: 50 to 120 MHz;(4)collector-emitter voltage: 6 V;(5)collector-emitter saturation voltage: 0.07 V;(6)base-emitter saturation voltage: 1.0 V;(7)DC current gain: 90 to 400. If you want to know more information such as the electrical characteristics about the 2SC1941, please download the datasheet in www.seekic.com or www.chinaicmart.com .