Specifications Item Symbol Rating Unit Collector to Base VoltageCollector to Emitter VoltageEmitter to Base VoltageCollector CurrentCollector DissipationTotal Power DissipationJunction TemperatureStorage Temperature V CBOV CEOV EBOI CID*1I C(peak)PC*1TjTstg 30143.0502003...
2SC1927: Specifications Item Symbol Rating Unit Collector to Base VoltageCollector to Emitter VoltageEmitter to Base VoltageCollector CurrentCollector DissipationTotal Power DissipationJ...
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Item |
Symbol |
Rating |
Unit |
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Dissipation Total Power Dissipation Junction Temperature Storage Temperature |
V CBO V CEO V EBO I C ID*1 I C(peak) PC*1 Tj Tstg |
30 14 3.0 50 200 300 200 -65 to +200 |
V V V mA mW/unit mW °C °C |
The 2SC1927 is an NPN silicon epitaxial dual transistor that consists of two chips equivalent to the 2SC1275, and is designed for differential amplifier and ultra-high-speed switching applications.