2SC1923

The 2SC1923 is designed as one kind of silicon NPN epitaxial planar type (PCT process) that can be used in high frequency amplifier and FM, RF, MIX, IF amplifier applications. And the two points of features of this device are:(1)small reverse transfer capacitance: Cre = 0.7 pF (typ.);(2)low noise figure: NF = 2.5 dB (typ.) (f=100 MHz).

The absolute maximum ratings of the 2SC1923 can be summarized as:(1)collector-base voltage: 40 V;(2)collector-emitter voltage: 30 V;(3)emitter-base voltage: 4 V;(4)collector current: 20 mA;(5)base current: 4 mA;(6)collector power dissipation: 100 mW;(7)junction temperature: 125 ;(8)storage tmeperature range: -55 to +125 . If you want to know more information such as the electrical characteristics about the 2SC1923, please download the datasheet in www.seekic.com or www.chinaicmart.com .