PinoutSpecifications Absolute maximum ratings VCEO [V] 25 IC [A] 2 PC [W] 0.75 Electrical characteristics hFE min 100 hFE max 560 VCE [V] 2 IC [A] 0.1 VCE (sat) typ [V] 0.35 VCE (sat) max [V] 0.6 IC [A] 1.5 IB [mA] 75Descrip...
2SB926: PinoutSpecifications Absolute maximum ratings VCEO [V] 25 IC [A] 2 PC [W] 0.75 Electrical characteristics hFE min 100 hFE max 560 VCE [V] 2 I...
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Absolute maximum ratings | |
---|---|
VCEO [V] | 25 |
IC [A] | 2 |
PC [W] | 0.75 |
Electrical characteristics | |
---|---|
hFE min | 100 |
hFE max | 560 |
VCE [V] | 2 |
IC [A] | 0.1 |
VCE (sat) typ [V] | 0.35 |
VCE (sat) max [V] | 0.6 |
IC [A] | 1.5 |
IB [mA] | 75 |
The 2SB926 is a kind of PNP epitaxial planar silicon transisitor.It can be used in relay drivers,power drivers,lamp drivers and electrical equipment.It is available in 2003A package.
There are some features of 2SB926. (1) adoption of FBET,MBIT process; (2) low saturation voltage; (3) large current capacity and wide ASO.
What comes next is the absolute maximum ratings of 2SB926 at TA is 25. (1): collector-to-base voltage(VCBO) is -30 V; (2): collector-to-emitter voltage(VCEO) is -25 V; (3): emitter-to-base voltage(VEBO) is -6 V; (4): collector current(IC) is -2 A; (5): collector dissipation(PC) is 0.75 W; (6): junction temperature is 150; (7): storage ambient temperature is from -55 to 150; (8): maximum collector cutoff current is -0.1 A; (9); minimum DC current gain is 100 and maximum is 560; (10): C-B breakdown voltage is -30 V,C-E breakdown voltage is -25V and E-B breakdown voltage is -6 V.You may see more details in the datasheet at www.seekic.com.