2SB922L

The 2SB922L is designed as one kind of PNP epitaxial plannar silicon transistors for 80V/12A switching applications, relay drivers, high speed inverters, converters and other large current switching applications.

2SB922L has two features. (1)Low collector to emitter saturation voltage Vce(sat)=-0.5V. (2)Wide ASO and highly resistant to breakdown. Those are all the main features.

Some absolute maximum ratings of 2SB922L have been concluded into several points as follow. (1)Its collector to base voltage would be -90V. (2)Its collector to emitter voltage would be -80V. (3)Its emitter to base voltage would be -6V. (4)Its collector current would be -12A. (5)Its collector current pulse would be -20A. (6)Its collector dissipation would be 80W. (7)Its junction temperature would be 150°C. (8)Its storage temperature range would be from -55°C to 150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of 2SB922L are concluded as follow. (1)Its collector cutoff current would be max -0.1mA with conditions of Vcb=-80V and Ie=0. (2)Its emitter cutoff current would be max -0.1mA with conditions of Veb=-4V and Ic=0. (3)Its DC current gain would be min 70 and max 280 with conditions of Vce=-2V and Ic=-1A and would be min 30 with conditions of Vce=-2V and Ic=-6A. (4)Its gain-bandwidth product would be typ 20MHz with conditions of Vce=-5V and Ic=-1A. (5)Its collector to emitter saturation voltage would be max 0.4V. (6)Its collector to base breakdown voltage would be min -90V. (7)Its collector to emitter breakdown voltage would be min -80V. (8)Its emitter to base breakdown voltage would be min -6V. And so on. At present we have not got so much information about this IC and we would try hard to get more informaion about it. If you have any question or suggestion or want to know more information please contact us for details. Thank you!