2SB921L

DescriptionThe 2SB921L is a kind of PNP epitaxial planar silicon transisitor.It can be used in relay drivers,high-speed inverters,converters and other general large-current switching applications.It is available in 2010B package. There are features of 2SB921L.(1) low saturation collector-to-emitt...

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SeekIC No. : 004221437 Detail

2SB921L: DescriptionThe 2SB921L is a kind of PNP epitaxial planar silicon transisitor.It can be used in relay drivers,high-speed inverters,converters and other general large-current switching applications.It...

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Part Number:
2SB921L
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Description

The 2SB921L is a kind of PNP epitaxial planar silicon transisitor.It can be used in relay drivers,high-speed inverters,converters and other general large-current switching applications.It is available in 2010B package.

There are features of 2SB921L.(1) low saturation collector-to-emitter voltage;(2) large current capacity.

What comes next is the absolute maximum ratings of 2SB921L at TA is 25.(1): collector-to-base voltage(VCBO) is -90 V;(2): collector-to-emitter voltage(VCEO) is -80 V;(3): emitter-to-base voltage(VCBO) is -6 V;(4): collector current(IC) is -5 A;(5): collector dissipation(PC) is 1.75 W;(6): junction temperature is 150;(7): storage ambient temperature is from -55 to 150; (8): maximum collector cutoff current is -0.1 mA;(9); minimum  DC current gain is 70 and maximum is 280;(10): rise time(TON) is 0.1 s and storage time(TSTG) is 1.6 s;(11): fall time(TF) is 0.4 s.(12): C-B breakdown voltage is -90 V,C-E breakdown voltage is -80 V and E-B breakdown voltage is -6 V.You may see more details in the datasheet at www.seekic.com.




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