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2SB907

Features: • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A)• Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −2 A)• Complementary to 2SD1222.Specifications Characteristics Symbol Rating Unit Collector-base voltage VCBO...

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2SB907: Features: • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A)• Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −2 A)• Complementary ...

2SB907 Data Sheet

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Part Number:
2SB907
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Product Details

Description



Features:

• High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A)
• Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −2 A)
• Complementary to 2SD1222.


Specifications

Characteristics Symbol Rating Unit
Collector-base voltage VCBO -60 V
Collector-emitter voltage VCEO -40 V
Emitter-base voltage VEBO -5 V
Collector current IC -3 A
Base current IB -0.3 A
Collector power
dissipation		 Ta = 25°C PC 1.0 W
Tc = 25°C 15
Junction temperature Tj 150 °C
Storage temperature range Tstg −55 to 150 °C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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