Application• Complementary to SD1220Specifications Characteristics Symbol Rating Unit Collector-base voltage VCBO −150 V Collector-emitter voltage VCEO −150 V Emitter-base voltage VEBO -6 V Collector current IC ...
2SB905: Application• Complementary to SD1220Specifications Characteristics Symbol Rating Unit Collector-base voltage VCBO −150 V Collector-emitter voltage V...
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Characteristics |
Symbol |
Rating |
Unit | |
Collector-base voltage |
VCBO |
−150 |
V | |
Collector-emitter voltage |
VCEO |
−150 |
V | |
Emitter-base voltage |
VEBO |
-6 |
V | |
Collector current |
IC |
−1.5 |
A | |
Base current |
IB |
−1.0 |
A | |
Collector power dissipation |
Ta = 25 |
PC |
1.0 |
W |
Tc = 25 |
10 | |||
Junction temperature |
Tj |
150 |
||
Storage temperature range |
Tstg |
−55 to 150 |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).