2SB799

The 2SB799 is designed as one kind of PNP silicon epitaxial transistor device that can be used in audio frequency power amplifier applications, especially in hybrid integrated circuits. Features of the 2SB799 are:(1)world standard miniature package: SOT-89;(2)low collector saturation voltage: VCE(sat) < -0.4 V (Ic= -500 mA, IB= -50 mA);(3)complements to NPN type 2SD1000.

The absolute maximum ratings of the 2SB799 can be summarized as:(1)collector to base voltage: -60 V;(2)collector to emitter voltage: -50 V;(3)emitter to base voltage: -5.0 V;(4)collector current (DC): -0.7 A;(5)collector current (pulse): -1.0 A;(6total power dissipation at 25 ambient temperature: 2.0 W;(7)junction temperature: 150 ;(8)storage temperature range: -55 to +150 .

The electrical characteristics of 2SB799 can be summarized as:(1)collector cutoff current: -100 nA;(2)emitter cutoff current: -100 nA;(3)DC current gain: 90 to 400;(4)collector saturation voltage: -0.16 to -0.4 V;(5)base saturation voltage: -0.9 to -1.2 V;(6)base to emitter voltage: -600 to -700 mV;(7)gain bandwidth product: 120 MHz;(8)output capacitance: 25 pF. If you want to know more information such as the electrical characteristics about it, please download the datasheet in www.seekic.com or www.chinaicmart.com.