2SB798

The 2SB798 is designed as one kind of PNP silicon epitaxial transistor device that can be used in audio frequency power amplifier applications, especially in hybrid integrated circuits. Features of the 2SB799 are:(1)world standard miniature package: SOT-89;(2)low collector saturation voltage: VCE(sat) < -0.4 V (Ic= -1000 mA, IB= -100 mA);(3)complements to NPN type 2SD999;(4)excellent DC current gain linearity: hFE = 100 typ. (VCE= -1.0 V, Ic = -1.0 A).

The absolute maximum ratings of the 2SB798 can be summarized as:(1)collector to base voltage: -30 V;(2)collector to emitter voltage: -25 V;(3)emitter to base voltage: -5.0 V;(4)collector current (DC): -1.0 A;(5)collector current (pulse): -1.5 A;(6total power dissipation at 25 ambient temperature: 2.0 W;(7)junction temperature: 150 ;(8)storage temperature range: -55 to +150 .

The electrical characteristics of this device can be summarized as:(1)collector cutoff current: -100 nA;(2)emitter cutoff current: -100 nA;(3)DC current gain: 90 to 400;(4)collector saturation voltage: -0.25 to -0.40 V;(5)base saturation voltage: -1.0 to -1.2 V;(6)base to emitter voltage: -600 to -700 mV;(7)gain bandwidth product: 110 MHz;(8)output capacitance: 36 pF. If you want to know more information such as the electrical characteristics about the 2SB798, please download the datasheet in www.seekic.com or www.chinaicmart.com.