2SB772

DC Collector/Base Gain hfe Min : 100
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : 5 V
Packaging : Tube
Maximum DC Collector Current : 3 A
Maximum Operating Frequency : 100 MHz
Collector- Emitter Voltage VCEO Max : 30 V
Package / Case : SOT-32


Features:

HIGH CURRENT
LOW SATURATION VOLTAGE
COMPLEMENT TO 2SD882




Application

VOLTAGE REGULATION
RELAY DRIVER
GENERIC SWITCH
AUDIO POWER AMPLIFIER
DC-DC CONVERTER




Specifications

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage (IE = 0)	-60	V
VCEO	Collector-Emitter Voltage (IB = 0)	-30	V
VEBO	Collector-Base Voltage (IC = 0)	-5	V
IC	Collector Current	-3	A
ICM	Collector Peak Current (tP < 5ms)	-6	A
IB	Base Current	-1	A
IBM	Base Peak Current (tP < 5ms)	-2	A
PTOT	Total dissipation at Tc = 25°C	-12.5	W
TSTG	Storage Temperature	-65 to 150	°C
TJ	Max. Operating Junction Temperature	150	°C

Description

The device is a PNP transistor manufactured by using planar Technology resulting in rugged high performance devices. The complementary PNP type is 2SD882.

The 2SB772 is designed as one kind of NPN medium power transistor that manufactured by using planar Technology resulting in rugged high performance devices. The complementary PNP type is 2SB772. This device can be used in (1)voltage regulation; (2)relay driver; (3)generic switch; (4)audio power amplifier; (5)DC-DC converter. And the features of it are:(1)high current; (2)low saturation voltage; (3)complement to 2SB772.

The absolute maximum ratings of the 2SB772 can be summarized as:(1)collector-base voltage (IE=0):-60 V;(2)collector-emitter voltage (IB=0):-30 V;(3)collector-base voltage (Ic=0):-5 V;(4)collector current:-3 A;(5)collector peak current (tP < 5ms):-6 A;(6)base current:-1 A;(7)base peak current (tP < 5ms):-2 A;(8)total dissipation at Tc=25°C:-12.5 W;(9)storage temperature:-65 to 150 °C;(10)max. operating junction temperature:150 °C;(11)thermal resistance junction-case:10 °C/W.

Information furnished is believed to be accurate and reliable. However,STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice.If you want to know more information such as the electrical characteristics about the 2SB772, please download the datasheet in www.seekic.com or www.chinaicmart.com.

Parameters:

Technical/Catalog Information	2SB772
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	30V
Current - Collector (Ic) (Max)	3A
Power - Max	12.5W
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 100mA, 2V
Vce Saturation (Max) @ Ib, Ic	700mV @ 100mA, 2A
Frequency - Transition	100MHz
Current - Collector Cutoff (Max)	100A
Mounting Type	Surface Mount
Package / Case	SOT-32-3, TO-126-3
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2SB772 2SB772 497 4829 5 ND 49748295ND 497-4829-5