2SB766A-R

The 2SB766A-R is designed as one kind of PNP silicon epitaxial transistor device that can be used in audio frequency power amplifier applications, especially in hybrid integrated circuits. Features of the 2SB766A-R are:(1)world standard miniature package: SOT-89;(2)low collector saturation voltage: VCE(sat) < -0.4 V (Ic= -1000 mA, IB= -100 mA);(3)complements to NPN type 2SD999;(4)excellent DC current gain linearity: hFE = 100 typ. (VCE= -1.0 V, Ic = -1.0 A).

The absolute maximum ratings of the 2SB766A-R can be summarized as:(1)collector to base voltage: -30 V;(2)collector to emitter voltage: -25 V;(3)emitter to base voltage: -5.0 V;(4)collector current (DC): -1.0 A;(5)collector current (pulse): -1.5 A;(6total power dissipation at 25 ambient temperature: 2.0 W;(7)junction temperature: 150 ;(8)storage temperature range: -55 to +150 .

The electrical characteristics of this device can be summarized as:(1)collector cutoff current: -100 nA;(2)emitter cutoff current: -100 nA;(3)DC current gain: 90 to 400;(4)collector saturation voltage: -0.25 to -0.40 V;(5)base saturation voltage: -1.0 to -1.2 V;(6)base to emitter voltage: -600 to -700 mV;(7)gain bandwidth product: 110 MHz;(8)output capacitance: 36 pF. If you want to know more information such as the electrical characteristics about the 2SB766A-R, please download the datasheet in www.seekic.com or www.chinaicmart.com.