2SB649AL

The 2SB649AL is one member of the 2SB649A family which designed as the bipolar power general purpose transistor that can be used in low frequency power amplifier complementary pair with UTC 2SB669/A.

The absolute maximum ratings of the 2SB649AL can be summarized as:(1)collector-base voltage:-180 V;(2)collector-emitter voltage:-160 V;(3)emitter-base voltage:-5 V;(4)collector current:-1.5 A;(5)collector peak current:-3 A;(6)collector power dissipation (SOT-89):0.5 W;(7)collector power dissipation (TO-126):1.4 W;(8)junction temperature:+150 ;(9)storage temperature:-40 to +150 .

The electrical characteristics (Ta=25, unless otherwise specified) of the 2SB649AL can be summarized as:(1)collector to base breakdown voltage:-180 V;(2)emitter to base breakdown voltage:-5 V;(3)collector cut-off current:-10 A;(4)collector-emitter saturation voltage:-1 V;(5)base-emitter voltage:-1.5 V;(6)current gain bandwidth product:140 MHz;(7)output capacitance:27 pF. If you want to know more information such as the electrical characteristics about the 2SB649AL, please download the datasheet in www.seekic.com or www.chinaicmart.com .