DescriptionThe 2SB647AC is designed as the silicon NPN epitaxial that can be used in (1)Low frequency amplifier; (2)Complementary pair with 2SD667/A. The absolute maximum ratings of the can be summarized as:(1)collector to base voltage: 90 A;(2)collector to emitter voltage: 90 V;(3)emitter to base...
2SB647AC: DescriptionThe 2SB647AC is designed as the silicon NPN epitaxial that can be used in (1)Low frequency amplifier; (2)Complementary pair with 2SD667/A. The absolute maximum ratings of the can be summa...
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The 2SB647AC is designed as the silicon NPN epitaxial that can be used in (1)Low frequency amplifier; (2)Complementary pair with 2SD667/A. The absolute maximum ratings of the can be summarized as:(1)collector to base voltage: 90 A;(2)collector to emitter voltage: 90 V;(3)emitter to base voltage: 5 V;(4)collector current: 50 mA;(5)collector power dissipation: 300 mW;(6)junction temperature: 150°C;(7)storage temperature:55 to +150 °C. If you want to know more information such as the electrical characteristics about the 2SB647AC, please download the datasheet in www.seekic.com or www.chinaicmart.com.