Application·Designed for high power amplifier and switching applicationsSpecifications SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -250 V VCEO Collector-Emitter Voltage -250 V VEBO Emitter-Base Voltage -5 V IC Collector ...
2SB613: Application·Designed for high power amplifier and switching applicationsSpecifications SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -250 V VCEO Colle...
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SYMBOL |
PARAMETER |
VALUE |
UNIT |
VCBO |
Collector-Base Voltage |
-250 |
V |
VCEO |
Collector-Emitter Voltage |
-250 |
V |
VEBO |
Emitter-Base Voltage |
-5 |
V |
IC |
Collector Current-Continuous |
-15 |
A |
IB |
Base current |
-5 |
A |
PC |
Collector Power Dissipation @TC=25 |
150 |
W |
Tj |
Junction Temperature |
200 |
|
Tstg |
Storage Temperature Range |
-65~200 |
The 2SB613 features:
`Collector-Emitter Breakdown Voltage- : V(BR)CEO= -250V(Min)
`High Power Dissipation- : PC= 150W(Max)@TC=25
`High Current Capability
`Complement to Type 2SD583