Application·For use in general purpose power amplifier,vertical output applicationSpecifications SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -200 V VCEO Collector-emitter voltage Open base -150 V VEBO ...
2SB546A: Application·For use in general purpose power amplifier,vertical output applicationSpecifications SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Ope...
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SYMBOL |
PARAMETER |
CONDITIONS |
VALUE |
UNIT |
VCBO |
Collector-base voltage |
Open emitter |
-200 |
V |
VCEO |
Collector-emitter voltage |
Open base |
-150 |
V |
VEBO |
Emitter-base voltage |
Open collector |
-5 |
V |
IC |
Collector current |
-2 |
A | |
ICM |
Collector current-peak |
-3 |
A | |
PT |
Total power dissipation | TC=25 |
30
|
W |
Tj |
Junction temperature |
150 |
||
Tstg |
Storage temperature |
-55~150 |
The 2SB546A is designed as one kind of Silicon PNP power transistors. It has four points of features:(1)collector-base voltage VCBO=-200V;(2)with TO-220C package;(3)collector current IC=-2A;(4)complement to type 2SD401A. Also it can be used in general purpose power amplifier,vertical output application.
The absolute maximum ratings of the 2SB546A can be summarized as:(1)collector-base voltage:-200 V;(2)collector-emitter voltage:-150 V;(3)emitter-base voltage:-5 V;(4)collector current:-2 A;(5)collector current-peak:-3 A;(6)total power dissipation Tc=25:30 W;(7)junction temperature:150 ;(8)storage temperature:-55 to 150 .If you want to know more information such as the electrical characteristics about the 2SB546A,please download the datasheet in www.seekic.com or www.chinaicmart.com .