2SB1580/BN

The 2SB1580/BN is designed as one kind of power transistor that has four points of features:(1)darlington connection for high DC current gain;(2)built-in resistor between base and emitter;(3)built-in damper diode;(4)complements the 2SD2195 / 2SD1980 / 2SD2398 / 2SD1765.

The absolute maximum ratings of the 2SB1580/BN can be summarized as:(1)collector-base voltage:-100 V;(2)collector-emitter voltage:-100 V;(3)emitter-base voltage:-8 V;(4)collector current:-2 A or -3 A;(5)junction temperature:150;(6)storage temperature:-55 tp +150.

And the electrical characteristics of the 2SB1580/BN can be summarized as:(1)collector-base breakdown voltage:-100 V;(2)collector-emitter breakdown voltage:-100 V;(3)collector cutoff current:-10 uA;(4)emitter cutoff current:-3 mA;(5)collector-emitter saturation voltage:-1.5 V;(6)DC current transfer ratio:1000 to 10000;(7)output capacitance:35 pF. If you want to know more information such as the electrical characteristics about the 2SB1580/BN, please download the datasheet in www.seekic.com or www.chinaicmart.com .