2SB1561-Q

The 2SB1561-Q is designed as one kind of power transistor that has four points of features:(1)low saturation voltage, typically VCE=-0.15V at Ic/IB=-1A / -50 mA;(2)collector-emitter voltage=-60V;(3)Pc=2 W (on 40 x 40 x 0.7 mm ceramic board);(4)complements the 2SD2391.

The absolute maximum ratings of the 2SB1561-Q can be summarized as:(1)collector-base voltage:-60 V;(2)collector-emitter voltage:-60 V;(3)emitter-base voltage:-6 V;(4)collector current:-2 A or -5 A;(5)junction temperature:150;(6)storage temperature:-55 tp +150.

And the electrical characteristics of the 2SB1561-Q can be summarized as:(1)collector-base breakdown voltage:-60 V;(2)collector-emitter breakdown voltage:-60 V;(3)collector cutoff current:-0.1 uA;(4)emitter cutoff current:-3 mA;(5)collector-emitter saturation voltage:-1.5 V;(6)DC current transfer ratio:120 to 270;(7)output capacitance:23 pF. If you want to know more information such as the electrical characteristics about the 2SB1561-Q, please download the datasheet in www.seekic.com or www.chinaicmart.com .