DescriptionThe 2SB1439 is a type of power transistor,which is silicon PNP epitaxial planar darlington type.AF output amplifer co mplementary pair with 2SD2183.Features of 2SB1439 are:(1)low collector-emitter saturation voltage;(2)high collect or-emitter voltage;(3)automatic mounting by radial tapi...
2SB1439: DescriptionThe 2SB1439 is a type of power transistor,which is silicon PNP epitaxial planar darlington type.AF output amplifer co mplementary pair with 2SD2183.Features of 2SB1439 are:(1)low collecto...
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The 2SB1439 is a type of power transistor,which is silicon PNP epitaxial planar darlington type.AF output amplifer co mplementary pair with 2SD2183.Features of 2SB1439 are:(1)low collector-emitter saturation voltage;(2)high collect or-emitter voltage;(3)automatic mounting by radial taping is possible.
The absolute maximum ratings(Tc=25) and electrical characteristics(Tc=25) of the 2SB1439 can be summarized as:(1)collector-base voltage: -100V;(2)colletor-emitter voltage:-100V; (3)emitter-base voltage: -5V; (4)peak collecto r current:-3A; (5)collector current: -2A;(6)collector power dissipation(Tc=25): 1.5W; (7)junction temperature: 150 ; (8)storage temperature: -55 to 150. Electrical characteristics:(1)collector cutoff current(VCE=-50V, IE=0):-0.1 uA max; (2)DC current gain(VCE=-2V, IC=-1A):80min; (3)base-emitter voltage(IB=-50mA, IC=-1A): -0.85V typ and -1.2V max; (4)collector output capacitance(VCB=-10V, IE=0, f=1MHz): 60pF typ and 80pF max; (5)transition frequency(VCB =-10V, IE=50mA, f=200MHz): 60MHz typ; (6)collector-emitter voltage(IC=-1mA, IB=0): -100V min, etc.
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