2SB1427-E

The 2SB1427-E is the member of the 2SB1427 family which is designed as one kind of medium power transistor (-20V, -2A) that has two points of features:(1)low saturation voltage, typically VCE(sat)=-0.5 V at Ic / IB = -1A / -50 mA ;(2)excellent DC current gain characteristics. And the structure of this device is epitaxial planar type NPN silicon transistor. The absolute maximum ratings of the 2SD1898R can be summarized as:(1)collector-base voltage: -20 V V;(2)collector-emitter voltage: -20 V;(3)emitter-base voltage: -6 V;(4)collector current: -2 A or -3 A;(4)junction temperature:150;(5)storage temperature:-55 to +150.

And the electrical characteristics of the 2SB1427-E can be summarized as:(1)collector-base breakdown voltage: -20 V;(2)collector-emitter breakdown voltage: -20 V;(3)emitter cutoff current: -0.5 A;(4)collector-emitter saturation voltage: -0.5 V;(5)DC current transfer ratio: 390 to 820;(6)transition frequency: 90 MHz;(7)output capacitance: 30 pF. If you want to know more information such as the electrical characteristics about the 2SB1427-E, please download the datasheet in www.seekic.com or www.chinaicmart.com.