Features: · Low VCE(sat).VCE(sat) =-0.2V (Typ.)(IC / IB = -2A / -0.1A)· Excellent DC current gain characteristics.· Complements the 2SD2150 /2SC4115S.Specifications Parameter Symbol Limits Unit Collector-base voltage VCBO -20 V Collector-emitter voltage VCEO -2...
2SB1424: Features: · Low VCE(sat).VCE(sat) =-0.2V (Typ.)(IC / IB = -2A / -0.1A)· Excellent DC current gain characteristics.· Complements the 2SD2150 /2SC4115S.Specifications Parameter Symbol Limit...
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Parameter |
Symbol |
Limits |
Unit | |
Collector-base voltage |
VCBO |
-20 |
V | |
Collector-emitter voltage |
VCEO |
-20 |
V | |
Emitter-base voltage |
VEBO |
-6 |
V | |
Collector current | 2SB1424 |
IC
|
-3 |
A |
2SA1585S |
-2 | |||
ICP |
-5 |
A(Pulse)(1) | ||
Junction temperature |
PC
|
0.6 |
W | |
0.4 | ||||
Tj |
150 |
|||
Storage temperature |
Tstg |
-55~+150 |
The 2SB1424 is designed as one kind of low VCE(sat) transistor device that has some points of features:(1)Low VCE(sat). VCE(sat) = -0.2V (typ.) (IC / IB = -2A / -0.1A);(2)Excellent DC current gain characteristics;(3)Complements the 2SD2150 / 2SC4115S.
The absolute maximum ratings of the 2SB1424 can be summarized as:(1)collector-base voltage: -20 V;(2)collector-emitter voltage: -20 V;(3)emitter-base voltage: -6 V;(4)collector current: -3 A;(5)collector power dissipation: 0.6 W;(6)junction temperature: 150 ;(7)storage temperature: -55 to +150 .
The electrical characteristics of 2SB1424 can be summarized as:(1)collector-base breakdown voltage: -20 V;(2)collector-emitter breakdown voltage: -20 V;(3)emitter-base breakdown voltage: -6 V;(4)collctor cutoff current: -0.1 uA;(5)emitter cutoff current: -0.1 uA;(6)collector-emitter saturation voltage: -0.5 V;(7)DC current transfer ratio: 120 to 390;(8)transition frequency: 240 MHz;(9)output capacitance: 35 pF. If you want to know more information such as the electrical characteristics about the 2SB1424, please download the datasheet in www.seekic.com or www.chinaicmart.com.