DescriptionThe 2SB1308/R is the member of the 2SB1308 family which is designed as one kind of low frequency transistor (-20V, -5A) that has three points of features:(1)low saturation voltage, typically VCE(sat)=-0.45 V at Ic / IB = -1.5A / -0.15A ;(2)excellent DC current gain characteristics;(3)co...
2SB1308/R: DescriptionThe 2SB1308/R is the member of the 2SB1308 family which is designed as one kind of low frequency transistor (-20V, -5A) that has three points of features:(1)low saturation voltage, typica...
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The 2SB1308/R is the member of the 2SB1308 family which is designed as one kind of low frequency transistor (-20V, -5A) that has three points of features:(1)low saturation voltage, typically VCE(sat)=-0.45 V at Ic / IB = -1.5A / -0.15A ;(2)excellent DC current gain characteristics;(3)complements the 2SD1963. And the structure of this device is epitaxial planar type NPN silicon transistor. The absolute maximum ratings of the 2SB1308/R can be summarized as:(1)collector-base voltage: -30 V V;(2)collector-emitter voltage: -20 V;(3)emitter-base voltage: -6 V;(4)collector current: -3 A or -5 A;(4)junction temperature:150;(5)storage temperature:-55 to +150.
And the electrical characteristics of the 2SB1308/R can be summarized as:(1)collector-base breakdown voltage: -30 V;(2)collector-emitter breakdown voltage: -20 V;(3)emitter cutoff current: -0.5 A;(4)collector-emitter saturation voltage: -1.0 V;(5)DC current transfer ratio: 82 to 390;(6)transition frequency: 120 MHz;(7)output capacitance: 60 pF. If you want to know more information such as the electrical characteristics about the 2SB1308/R, please download the datasheet in www.seekic.com or www.chinaicmart.com.