Features: ·Adoption of FBET, MBIT processes.·Low collector-to-emitter saturation voltage.·Large current capacity.·Fast switching speed.·Very small size making it easy to provide highdensity,·small-sized hybrid ICsPinoutSpecifications Parameter Symbol Rating UNIT Collector-base voltage ...
2SB1302: Features: ·Adoption of FBET, MBIT processes.·Low collector-to-emitter saturation voltage.·Large current capacity.·Fast switching speed.·Very small size making it easy to provide highdensity,·small-s...
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Parameter | Symbol | Rating | UNIT |
Collector-base voltage | VCBO | -25 | V |
Collector-emitter voltage | VCEO | -20 | V |
Emitter-base voltage | VEBO | -5 | V |
Collector current | IC | -5 | A |
Collector current (pulse) | ICP | -8 | A |
Collector power dissipation | PC | 1.3 | W |
Jumction temperature | Tj | 150 | |
Storage temperature | Tstg | -55 to +150 |
Absolute maximum ratings | |
---|---|
VCEO [V] | 20 |
IC [A] | 5 |
PC [W] | 1.3
When mounted on ceramic substrate (250mm²*0.8mm) 1unit |
Electrical characteristics | |
---|---|
hFE min | 100 |
hFE max | 400 |
VCE [V] | 2 |
IC [A] | 0.5 |
VCE (sat) typ [V] | 0.25 |
VCE (sat) max [V] | 0.5 |
IC [A] | 3 |
IB [mA] | 60 |