2SB1275

The 2SB1275 is designed as one kind of low frequency transistor (-20V, -5A) that has four points of features:(1)high breakdown voltage (BVCEO= -160 V);(2)low collector output capacitance (typ. 30 pF at VCB=10 V);(3)complements the 2SD1918;(4)high transition frequency (fT=50 MHz). And the structure of this device is epitaxial planar type NPN silicon transistor. The absolute maximum ratings of the 2SB1275 can be summarized as:(1)collector-base voltage: -160 V;(2)collector-emitter voltage: -160 V;(3)emitter-base voltage: -5 V;(4)collector current: -1.5 A or -3 A;(4)junction temperature:150;(5)storage temperature:-55 to +150.

And the electrical characteristics of the 2SB1275 can be summarized as:(1)collector-base breakdown voltage: -160 V;(2)collector-emitter breakdown voltage: -160 V;(3)emitter cutoff current: -0.5 A;(4)collector-emitter saturation voltage: -1.5 V;(5)DC current transfer ratio: 56 to 180;(6)transition frequency: 50 MHz;(7)output capacitance: 30 pF. If you want to know more information such as the electrical characteristics about the 2SB1275, please download the datasheet in www.seekic.com or www.chinaicmart.com.