2SB1261-Z-T1

The 2SB1261-Z-T1 is one member of the 2SB1261-Z family which is designed as the PNP silicon epitaxial transistor that is designed for audio frequency amplifier and switching, especially in hybrid integrated circuits. And the two points of features are:(1)high hFE = 100 to 400;(2)low VEC(sat) </= 0.3 V.

The absolute maximum ratings of the 2SB1261-Z-T1 can be summarized as:(1)collector to base voltage: -60 V;(2)collector to emitter voltage: -60 V;(3)emitter to base voltage: -7.0 V;(4)collector current (DC): -3.0 A;(5)collector current (pulse): -5.0 A;(6)base current (DC): -0.5 A;(7)total power dissipation (Ta=25): 2.0 W;(8)total power dissipation (Tc=25): 10 W;(9)junction temperature: 150 ;(10)storage temperature: -55 to +150 . If you want to know more information such as the electrical characteristics about 2SB1261-Z-T1, please download the datasheet in www.seekic.com or www.chinaicmart.com .