2SB1260/BER

The 2SB1260/BER is the member of the 2SB1260 family which is designed as one kind of low frequency transistor (-80V, -1A) that has four points of features:(1)high breakdown voltage and current (BVCEO= -80 V, Ic= -1 A);(2)low VCE(sat);(3)complements the 2SD1898;(4)good hFE linearity. And the structure of this device is epitaxial planar type NPN silicon transistor. The absolute maximum ratings of the 2SB1260/BER can be summarized as:(1)collector-base voltage: -80 V;(2)collector-emitter voltage: -80 V;(3)emitter-base voltage: -5 V;(4)collector current: -1 A or -2 A;(4)junction temperature:150;(5)storage temperature:-55 to +150.

And the electrical characteristics of the 2SB1260/BER can be summarized as:(1)collector-base breakdown voltage: -80 V;(2)collector-emitter breakdown voltage: -80 V;(3)emitter cutoff current: -1 A;(4)collector-emitter saturation voltage: -0.4 V;(5)DC current transfer ratio: 56 to 180;(6)transition frequency: 100 MHz;(7)output capacitance: 25 pF. If you want to know more information such as the electrical characteristics about the 2SB1260/BER, please download the datasheet in www.seekic.com or www.chinaicmart.com.