2SB1231Q

The 2SB1231Q is designed as one kind of silicon PNP epotaxial type that has four points of features:(1)large current capacity and wide ASO;(2)low saturation voltage. And this device can be used in motor drivers, relay drivers, converters, and other general high-current switching applications.

The absolute maximum ratings of the 2SB1231Q can be summarized as:(1)collector-base voltage: -110 V;(2)collector-emitter voltage: -100 V;(3)emitter-base voltage: -6 V;(4)collector current: -40 A;(5)collector power dissipation: 3.0 W;(6)junction temperature: 150 ;(7)storage tmeperature range: -55 to +150 .

And the electrical characteristics of the 2SB1231Q can be summarized as:(1)collector cut-off current: -0.1 mA;(2)emitter cut-off current: -0.1 mA;(3)collector-emitter breakdown voltage: -100 V;(4)DC current gain: 50;(5)collector-emitter saturation voltage: -0.8 V;(6)base-emitter saturation voltage: -1.5 V. If you want to know more information such as the electrical characteristics about the 2SB1231Q, please download the datasheet in www.seekic.com or www.chinaicmart.com .