2SB1227-220F

The 2SB1227-220F is one member of the 2SB1227 family that is designed as one kind of silicon PNP epitaxial planar silicon darlington transistor that has four points of features:(1)adoption of FBET, MBIT processes;(2)large current capacity;(3)low collector-to-emitter saturation voltage;(4)micaless package facilitating mounting. And this device can be used in control of motor drivers, printer hammer drivers, relay drivers, and constant voltage regulators.

The absolute maximum ratings of the 2SB1227-220F can be summarized as:(1)collector-base voltage: -110 V;(2)collector-emitter voltage: -100 V;(3)emitter-base voltage: -6 V;(4)collector current: -8 A;(5)collector power dissipation: 2.0 W;(6)junction temperature: 150 ;(7)storage tmeperature range: -55 to +150 .

And the electrical characteristics of the 2SB1227-220F can be summarized as:(1)collector cut-off current: -0.1 mA;(2)emitter cut-off current: -3.0 mA;(3)collector-emitter breakdown voltage: -100 V;(4)DC current gain: 1500 to 4000;(5)collector-emitter saturation voltage: 0.9 V;(6)base-emitter saturation voltage: -2.0 V. If you want to know more information such as the electrical characteristics about the 2SB1227-220F, please download the datasheet in www.seekic.com or www.chinaicmart.com .