2SB1225-TEO

The 2SB1225-TEO is one of the 2SB1225 series.The device is a pnp/npn epitaxial planar silicon transistors,driver applications.Features of the 2SB1225-TEO are:(1)high dc current gain; (2)large current capacity and wide ASO.; (3)micaless package facilitating mounting;(4)low saturationg voltage.

The absolute maximum ratings of the 2SB1225-TEO can be summarized as:(1)collector-to-base voltage:(-)70V; (2)collector-to-emitter voltage:(-)60V; (3)emitter-to-base voltage:(-)6V; (4)collector current(pulse):(-)15A; (5)collector current:(-)10A; (6)collector dissipation:2.0W;30W(Tc=25); (7)junction temperature:150; (8)storage temperature:-55~150.

The electrical characteristics at TA=25°C of the 2SB1225-TEO can be summarized as:(1)collector cutoff current:(-)0.1mA; (2)emitter cutoff current:(-)3.0mA; (3)dc current gain :2000 5000; (4)gain-bandwidth product:20MHz; (5)b-e saturation voltage:(-)2.0V; (6)C-E saturation voltage:0.9 (-)1.5V;(7)c-b breakdown voltage:(-)70V;(8)c-e breakdown voltage:(-)60V.If you want to know more information such as the electrical AC characteristics ,please download the datasheet in www.seekdatasheet.com .