2SB1216S

The 2SB1216S is designed as one kind of PNP silicon power transistor which has a large current capability and wide SOA. This device is suitable for DC-DC converter, or driver of solenoid or motor. Features of the 2SB1216S are:(1)low collector saturation voltage: VCE(sat)= -0.3 max. (@Ic/IB= -1.5 A/-0.15 A;(2)large current: Ic(DC)= -3.0 A, Ic(pulse)= -5.0 A;(3)high total power dissipation: PT= 1.3 W;(4)complementary to 2SB1216.

The absolute maximum ratings of the 2SB1216S can be summarized as:(1)storage temperature: -55 to +150 ;(2)junction temperature: +150 maximum;(3)total power dissipation (Ta=25): 1 W;(4)total power dissipation (Ta=25): 10 W;(5)collector to base voltage: -120 V;(6)collector to emitter voltage: -100 V;(7)emitter to base voltage: -6.0 V;(8)collector current: -4.0 A;(9)collector current: 4 A. If you want to know more information such as the electrical characteristics about the 2SB1216S, please download the datasheet in www.seekic.com or www.chinaicmart.com .