2SB1215S

The 2SB1215S is designed as one kind of PNP silicon power transistor which has a large current capability and wide SOA. This device is suitable for DC-DC converter, or driver of solenoid or motor. Features of the 2SB1215S are:(1)low collector-to-emitter saturation voltage;(2)excellent linearity of hFE;(3)small-sized package permitting 2SB1215 applied sets to be made small and slim;(4)high fT;(5)fast switching time.

The absolute maximum ratings of the 2SB1215S can be summarized as:(1)storage temperature: -55 to +150 ;(2)junction temperature: +150 maximum;(3)total power dissipation (Ta=25): 1 W;(4)total power dissipation (Ta=25): 10 W;(5)collector to base voltage: -120 V;(6)collector to emitter voltage: -100 V;(7)emitter to base voltage: -6.0 V;(8)collector current: -3.0 A;(9)collector current (pulse): -6 A. If you want to know more information such as the electrical characteristics about the 2SB1215S, please download the datasheet in www.seekic.com or www.chinaicmart.com .