2SB1214

The 2SB1214 is designed as one kind of PNP silicon power transistor which has a large current capability and wide SOA. This device is suitable for motor drivers, hammer drivers and relay drivers. Features of the device are:(1)high DC current gain;(2)darlington connection;(3)small and slim package permitting the 2SB1214 applied sets to be made more compact;(4)high fT;(5)fast switching time.

The absolute maximum ratings of the 2SB1214 can be summarized as:(1)storage temperature: -55 to +150 ;(2)junction temperature: +150 maximum;(3)total power dissipation: 1 W;(4)total power dissipation (Ta=25): 15 W;(5)collector to base voltage: -80 V;(6)collector to emitter voltage: -60 V;(7)emitter to base voltage: -6.0 V;(8)collector current: -3.0 A;(9)collector current (pulse): -6 A. If you want to know more information such as the electrical characteristics about the 2SB1214, please download the datasheet in www.seekic.com or www.chinaicmart.com .