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2SA965-Y(TE6,F,M)

Transistors Bipolar (BJT) Transistor PNP, 120V, 0.8A

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SeekIC No. : 00209931 Detail

2SA965-Y(TE6,F,M): Transistors Bipolar (BJT) Transistor PNP, 120V, 0.8A

2SA965-Y(TE6,F,M) Data Sheet

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Part Number:
2SA965-Y(TE6,F,M)
Mfg:
Toshiba
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/17

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Product Details

Description

Transistor Polarity :
Collector- Emitter Voltage VCEO Max :
Emitter- Base Voltage VEBO :
Maximum DC Collector Current :
DC Collector/Base Gain hfe Min :
Configuration :
Maximum Operating Frequency :
Maximum Operating Temperature :
Mounting Style :
Package / Case :
Packaging :


Parameters:

Technical/Catalog Information2SA965-Y(TE6,F,M)
VendorToshiba
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)120V
Current - Collector (Ic) (Max)800mA
Power - Max900mW
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 100mA, 5V
Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
Frequency - Transition120MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-92
PackagingTape & Box (TB)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2SA965 Y TE6,F,M
2SA965YTE6,F,M



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