2SA950 Selling Leads, Price trend, 2SA950 DataSheet download, circuit diagram from SeekIC.com

Features: • High hFE: hFE = 100~320• 1 W output applications• Complementary to 2SC2120Specifications Characteristics Symbol Rating Unit Collector-base voltage VCBO −35 V Collector-emitter voltage VCEO −30 V Emitter-base...

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2SA950: Features: • High hFE: hFE = 100~320• 1 W output applications• Complementary to 2SC2120Specifications Characteristics Symbol Rating Unit Collector-base voltage ...

2SA950 Data Sheet

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Part Number:: 2SA950
Supply Ability:: 5000

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1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/11/21

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Product Details

Description

Features:

• High h_FE: h_FE = 100~320
• 1 W output applications
• Complementary to 2SC2120

Specifications

Characteristics	Symbol	Rating	Unit
Collector-base voltage	V_CBO	−35	V
Collector-emitter voltage	V_CEO	−30	V
Emitter-base voltage	V_EBO	−5	V
Collector current	I_C	−800	mA
Base current	I_B	−160	mA
Collector power dissipation	P_C	600	mW
Junction temperature	T_j	150
Storage temperature range	T_stg	−55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

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2SA950

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